NDLI: Low-Field Mobility and Quantum Effects in Asymmetric Silicon-Based Field-Effect Devices

Content Provider	Springer Nature Link
Author	Knezevic, I. Vasileska, D. He, X. Schroder, D.K. Ferry, D.K.
Copyright Year	2002
Abstract	Though asymmetric MOSFET structures are being designed in response to small-geometry effects, the performance estimates of such devices often rely on the conventional device description, and neglect to properly account for the interplay between quantum effects and the effects of asymmetry. In this paper, we investigate the low-field transport in a highly asymmetric MOSFET structure, characterized by a p $^{+}$-implant at the source end, by using a Monte Carlo—Poisson simulation with the quantum effects incorporated through an effective potential. We observe that highly-pronounced asymmetry leads to ballistic transport features, which become suppressed by the inclusion of quantum effects. We prove that mobility degradation is an essentially non-equilibrium signature of quantum mechanics, independent of the well-established equilibrium signatures (charge set-back and gap widening). Consequently, in order to properly estimate the device performance, it becomes important to account for the channel mobility degradation due to quantum effects.
Starting Page	273
Ending Page	277
Page Count	5
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	1
Issue Number	1-2
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2002-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Mathematical and Computational Physics ApplicationMathematics/Computational Methods of Engineering Mechanical Engineering Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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