NDLI: A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures

Content Provider	Springer Nature Link
Author	Brown, Andrew R. Watling, Jeremy R. Asev, Asen
Copyright Year	2002
Abstract	The double gate MOSFET architecture has been proposed as a possible solution to allow the scaling of MOSFETs to the sub-30 nm regime, particularly due to its inherent resistance to short-channel effects. The use of lightly doped, or even undoped, channels means that such devices should be inherently resistant to random dopant induced fluctuations which will be one of the major obstacles to MOSFET scaling towards the end of the Si Roadmap. Random dopants within the channel are not, however, the only source of intrinsic fluctuations within MOSFETs at this scale. In this paper we investigate the impact of discrete dopants in the source and drain, individual charges within the active region and line edge roughness on the intrinsic parameter fluctuations in double gate MOSFETs.
Starting Page	165
Ending Page	169
Page Count	5
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	1
Issue Number	1-2
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2002-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Mathematical and Computational Physics ApplicationMathematics/Computational Methods of Engineering Mechanical Engineering Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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