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| Content Provider | Springer Nature Link |
|---|---|
| Author | Gamiz, F. Godoy, A. Donetti, L. Sampedro, C. Roldan, J. B. Ruiz, F. Tienda, I. Rodriguez, N. Jimenez Molis, F. |
| Copyright Year | 2009 |
| Abstract | The Monte Carlo simulation method is used to analyze the behavior of electron and hole mobility in different nanoelectronic devices including double gate transistors and FinFETs. The impact of technological parameters on carrier mobility is broadly discussed, and its behavior physically explained. Our main goal is to show how mobility in multiple gate devices compares to that in single gate devices and to study different approaches to improve the performance of these devices. Simulations of ultrashort channel devices taking into account quantum effects are also shown. |
| Starting Page | 174 |
| Ending Page | 191 |
| Page Count | 18 |
| File Format | |
| ISSN | 15698025 |
| Journal | Journal of Computational Electronics |
| Volume Number | 8 |
| Issue Number | 3-4 |
| e-ISSN | 15728137 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2009-10-15 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Numerical simulation Monte Carlo method Nanoelectronics Low-field mobility Quantum-well devices Quantum-wire devices Mechanical Engineering Optical and Electronic Materials Theoretical, Mathematical and Computational Physics Electrical Engineering ApplicationMathematics/Computational Methods of Engineering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation |
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