NDLI: Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers

Content Provider	Springer Nature Link
Author	Chen, Wanqiang Zheng, Xin Register, Leonard F. Stroscio, Michael
Copyright Year	2002
Abstract	Hot electron distributions within the active region of quantum well lasers lead to gain suppression, reduced quantum efficiency, and increased diffusion capacitance, greater low-frequency roll-off and high-frequency chirp. Recently, “tunnel injection lasers” have been developed to minimize electron heating within the active quantum well region by direct injection of cool electrons from the separate confinement region into the lasing subband(s) through a tunneling barrier. Tunnel injection lasers, however, also present a rich physics of transport and scattering, and a correspondingly rich set of challenges to simulation and device optimization. For example, a Golden-Rule-based analysis of the carrier injection into the active region of the ideal tunnel injection laser would suggest approximately uniform injection of electrons among the nominally degenerate ground quantum well states from the separate confinement region states. However, such an analysis ignores (via a random-phase approximation among the final states) the basic real-space transport requirement that injected carriers still must pass through the wells sequentially, coherently or otherwise, with an associated attenuation of the injected current into each subsequent well due to electron-hole recombination in the prior well. Transport among the wells then can be either thermionic, or, of theoretically increasing importance for low temperature carriers, via tunneling. Coherent resonant tunneling between wells, however, is sensitive to the potential drops between wells that split the energies of the lasing subbands and (further) localizes the electron states to individual wells. In this work such transport issues are elucidated using Schrödinger Equation Monte Carlo (SEMC) based quantum transport simulation.
Starting Page	123
Ending Page	127
Page Count	5
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	1
Issue Number	1-2
e-ISSN	15728137
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2002-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Mathematical and Computational Physics ApplicationMathematics/Computational Methods of Engineering Mechanical Engineering Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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