NDLI: Two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET

Content Provider	Springer Nature Link
Author	Mahmud, Md. Arafat Subrina, Samia
Copyright Year	2016
Abstract	We have developed a two-dimensional analytical model for the channel potential, threshold voltage, and drain-to-source current of a symmetric double-halo gate-stacked triple-material double-gate metal–oxide–semiconductor field-effect transistor (MOSFET). The two-dimensional Poisson’s equation is solved to obtain the channel potential. For accurate modeling of the device, fringing capacitance and effective surface charge are considered. The basic drift–diffusion equation is used to model the drain-to-source current. The midchannel potential of the device is used instead of the surface potential in the current modeling, considering the fact that the punch-through current is not confined only to the surface in a fully depleted MOSFET. An expression for the pinch-off voltage is derived to model the drain current in the saturation region accurately. Various short-channel effects such as drain-induced barrier lowering, gate leakage, threshold voltage, and roll-off have also been investigated. This structure shows excellent ability to suppress various short-channel effects. The results of the proposed model are validated against data obtained from a commercially available numerical device simulator.
Starting Page	525
Ending Page	536
Page Count	12
File Format	PDF
ISSN	15698025
Journal	Journal of Computational Electronics
Volume Number	15
Issue Number	2
e-ISSN	15728137
Language	English
Publisher	Springer US
Publisher Date	2016-03-30
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Double-gate MOSFET Gate stacked Triple material Halo doping Fringing capacitance Short-channel effects ApplicationMathematics/Computational Methods of Engineering Electrical Engineering Theoretical, Mathematical and Computational Physics Optical and Electronic Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Modeling and Simulation

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