NDLI: Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier

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Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier

Content Provider	Semantic Scholar
Author	Han, Hak-Seung Seo, Se-Young Shin, Jung Hun
Copyright Year	2002
Abstract	Gain-determining coefficients in Er-doped, nanocrystal-Si ( nc-Si) sensitized silica waveguide amplifiers are investigated. Single-mode, Er-doped silica waveguides with nc-Si embedded in them were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of Er-dopeda-Si:Ox (x,2! followed by a high-temperature anneal to precipitate nc-Si. Exciting the Er ions vianc-Si by pumping the waveguide from the top with the 477 nm line of an Ar laser resulted in an enhancement of the transmitted 1535 nm signal of up to 14 dB/cm, indicating a possible net gain of up to 7 dB/cm. From the dependence of the signal enhancement upon the pump power, an emission cross section of 2 310 cm at 1535 nm and an effective excitation cross section of>10 cm at 477 nm is obtained. ©2002 American Institute of Physics. @DOI: 10.1063/1.1520710 #
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://koasas.kaist.ac.kr/bitstream/10203/83942/1/000179042200006.pdf
Alternate Webpage(s)	http://spl.kaist.ac.kr/file/Published%20Papers/(20)GainFigAPL.pdf
Language	English
Access Restriction	Open
Subject Keyword	Amplifier Banded waveguide synthesis Cardiomyopathies Coefficient Cross section (geometry) Cyclotrons Doping (semiconductor) Electron Embedded system Embedding Ephrin Type-B Receptor 1, human Erbium Excitation International System of Units Ions Nanocrystalline Materials Plasma Active Plasma-enhanced chemical vapor deposition Pumping (computer systems) Resonance Silicon Vacuum deposition Waveguide Device Component disease transmission negative regulation of translation in response to endoplasmic reticulum stress pump (device)
Content Type	Text
Resource Type	Article

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