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Enhancement of Er 3 þ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping
| Content Provider | Semantic Scholar |
|---|---|
| Author | Karthik G. Mebratu Mun-Jun Kim, Dallwoo Jung, Heon Shin |
| Copyright Year | 2004 |
| Abstract | The effect of C co-doping on the Er3þ luminescence properties of Er-doped hydrogenated amorphous Si (a-Si:H) is investigated. Er-doped a-Si:H thin films co-doped with C were deposited using electron–cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and CH4 with concurrent sputtering of Er. We find that C co-doping greatly increases the room temperature 1.54 mm Er3þ photoluminescence (PL) intensity, with the maximum enhancement by a factor of 4 being obtained at a C concentration of 15 at.%. Part of the reason for such enhancement is the suppression of the temperature quenching of the Er3þ PL intensity and liftime, which we attribute to the increased optical bandgap of a-Si:H due to C co-doping. However, unlike other co-dopants such as O that also can enhance the Er3þ PL, C co-doping does not degrade the a-Si:H film quality, demonstrating its suitability for developing Si-based optoelectronic devices. [DOI: 10.1143/JJAP.43.444] |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://spl.kaist.ac.kr/file/Published%20Papers/(30)Mebratu%20JJAP.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Carbon Cyclotrons Digital Object Identifier Dopant Doping (semiconductor) Doping in Sports Electron HLA-DP Antigens One-electron universe Photoluminescence Physical vapor deposition Plasma Active Plasma-enhanced chemical vapor deposition Resonance Silicon Vacuum deposition Zero suppression luminescence negative regulation of translation in response to endoplasmic reticulum stress |
| Content Type | Text |
| Resource Type | Article |
