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Exciting erbium-doped planar optical amplifier materials
| Content Provider | Semantic Scholar |
|---|---|
| Author | Polman, Albert J. |
| Abstract | Erbium-doped planar optical amplifiers can find numerous applications in photonic integrated circuits operating at 1.5 μm. The challenge is to fabricate these devices with hig gain, operating at low pump power , and having small overall size . In this paper a review is given of our recent work in the area of Er-doped waveguide materials and amplifiers based on three materials classes: oxide films (Al2O3, Y2O3, SiO2), polymers, and silicon. The smallest amplifier (1 mm ), is made using Al 2O3 channel waveguides and operates at a pump power of 10 mW, providing a gain of 2.3 dB. In this material a cooperative upconversion interaction between excited Er ions is the main gainlimiting factor. We show that Er-doped Al 2O3 waveguides with similar Er concentration, but fabricated using different methods, can show completely different upconversion coefficients. In Y 2O3 we show that Eu co-doping can increase the gain performance and reduce the influence of upconversion. In SiO 2, sensitizers such as Yb ions or Si quantum dots enhance the pump efficiency. A precise optimization of the silica network composition has enabled the fabrication of an optical amplifier with a gain as high as 4.1 dB/cm. Polymer waveguides can be doped with Er ions encapsulated in an organic cage complex. While the 1.5 μm mission bandwidth in these complexes is a large as 70 nm, the luminescence quantum efficiency is small, due to coupling to vibrational states. Sensitizers can be attached to the complex to increase the excitation rate. The quenching problem can be solved by using a nanocomposite material, in which the Er is incorporated in silica colloids that are embedded in the polymer. Silicon is an excellent waveguide material at 1.5 μm, and it is a challenge to fabricate an electrically pumped optical amplifier in this material. Clear 1.5 μm luminescence can be observed from Er-doped single-crystal Si, but strong quenching is observed at room temperature due to a backtransfer process. We demonstrate that by taking advantage of the known nano-fabrication technology for Si, photonic crystal waveguides can be made with extremely small dimensions. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://mtf.etf.bg.ac.rs/downloads/dokumenti/Erbium-doped%20OpAmp.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Class Coefficient Colloids Dimensions Doping (semiconductor) Doping in Sports Electricity Embedded system Embedding Erbium Excitation GNU nano Integrated circuit International System of Units Ions Mathematical optimization Nanocomposite Optical amplifier Photoelectrochemical process Polymer Polymers Quantum Dots Quantum dot Silicon Dioxide Waveguide Device Component luminescence pump (device) |
| Content Type | Text |
| Resource Type | Article |
