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Exciton – erbium interactions in Si nanocrystal-doped SiO 2
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kika, P. G. Polman, Albert J. |
| Copyright Year | 2000 |
| Abstract | The presence of silicon nanocrystals in Er doped SiO 2 can enhance the effective Er optical absorption cross section by several orders of magnitude due to a strong coupling between quantum confined excitons and Er. This article studies the fundamental processes that determine the potential of Si nanocrystals as sensitizers for use in Er doped waveguide amplifiers or lasers. Silicon nanocrystals were formed in SiO 2 using Si ion implantation and thermal annealing. The nanocrystal-doped SiO 2 layer was implanted with different doses of Er, resulting in Er peak concentrations in the range 0.015–1.8 at. %. All samples show a broad nanocrystal-related luminescence spectrum centered around 800 nm and a sharp Er luminescence line at 1536 nm. By varying the Er concentration and measuring the nanocrystal and Er photoluminescence intensity, the nanocrystal excitation rate, the Er excitation and decay rate, and the Er saturation with pump power, we conclude that: ~a! the maximum amount of Er that can be excited via exciton recombination in Si nanocrystals is 1–2 Er ions per nanocrystal, ~b! the Er concentration limit can be explained by two different mechanisms occurring at high pump power, namely Auger de-excitationand pair-induced quenching , ~c! the excitable Er ions are most likely located in an SiO 2-like environment, and have a luminescence efficiency ,18%, and ~d! at a typical nanocrystal concentration of 10 cm, the maximum optical gain at 1.54 mm of an Er-doped waveguide amplifier based on Si nanocrystal-doped SiO 2 is ;0.6 dB/cm. © 2000 American Institute of Physics.@S0021-8979 ~00!06516-6# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://kik.creol.ucf.edu/publications/2000-kik-jap.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Cross section (geometry) Doping (semiconductor) Emoticon Erbium Ethinyl Estradiol Excitable medium Excitation Exciton Free carrier absorption Gold Implants Interaction International System of Units Ion implantation Ions Lasers Nanocrystalline Materials Optical amplifier Photoelectrochemical process Silicon Simulated annealing Waveguide Device Component luminescence orders - HL7PublishingDomain |
| Content Type | Text |
| Resource Type | Article |
