Loading...
Please wait, while we are loading the content...
Similar Documents
Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fung, Tze Ching Chuang, Chiao Shun Chen, Charlene Abe, Katsumi Cottle, Robert D. Townsend, Mark A. Kumomi, Hideya Kanicki, Jerzy |
| Copyright Year | 2009 |
| Abstract | We reported on a two-dimensional simulation of electrical properties of the radio frequency (rf) sputter amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFT used in this work has the following performance: field-effect mobility (μeff) of ∼12 cm2/V s, threshold voltage (Vth) of ∼1.15 V, subthreshold swing (S) of ∼0.13 V/dec, and on/off ratio over 1010. To accurately simulate the measured transistor electrical properties, the density-of-states model is developed. The donorlike states are also proposed to be associated with the oxygen vacancy in a-IGZO. The experimental and calculated results show that the rf sputter a-IGZO TFT has a very sharp conduction band-tail slope distribution (Ea=13 meV) and Ti ohmic-like source/drain contacts with a specific contact resistance lower than 2.7×10−3 Ω cm2. |
| Starting Page | 084511 |
| Ending Page | 084511 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3234400 |
| Volume Number | 106 |
| Alternate Webpage(s) | http://vhosts.eecs.umich.edu/omelab/downloads/TF%20JAP%202009.pdf |
| Alternate Webpage(s) | http://wwweb.eecs.umich.edu/omelab/downloads/TF%20JAP%202009.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3234400 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
