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Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing
| Content Provider | Semantic Scholar |
|---|---|
| Author | Du, Xiao Song Frederick, Ryan T. Li, Yajuan Zhou, Zheng Stickle, William F. Herman, Gregory S. |
| Copyright Year | 2015 |
| Abstract | The authors present a facile, low-cost methodology to fabricate high-performance In-Ga-Zn-O (IGZO) bottom contact, bottom gate thin-film transistors (TFTs) by soft lithography. The IGZO channel and indium tin oxide (ITO) source and drain were patterned using microcontact printing of an octadecylphosphonic acid self-assembled monolayer (SAM). A polymer stamp was used for the pattern transfer of the SAMs, which were then used as a chemical protection layer during wet etching. Excellent pattern transfer was obtained with good resolution and sharp step profiles. X-ray photoelectron spectroscopy indicated that the microcontact printed SAMs can be effectively removed from the ITO source/drain surfaces, allowing a high-quality interface to the IGZO channel for good device performance. Scanning electron microscopy cross-sections of the devices indicate a smooth and defect-free transition regions between the source/drain and semiconductor regions. The fabricated TFTs have negligible gate-leakage currents, high ave... |
| Starting Page | 052208 |
| Ending Page | 052208 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.4929984 |
| Alternate Webpage(s) | https://ir.library.oregonstate.edu/downloads/vh53wx62w?locale=en |
| Alternate Webpage(s) | https://doi.org/10.1116/1.4929984 |
| Volume Number | 33 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
