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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tze-Ching Fung Abe, K. Kumomi, H. Kanicki, J. |
| Copyright Year | 2005 |
| Abstract | Bias-temperature-stress (BTS) induced electrical instability of the RF sputter amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) was investigated. Both positive and negative BTS were applied and found to primarily cause a positive and negative voltage shift in transfer (I DS-V GS) characteristics, respectively. The time evolution of bulk-state density (N BS) and characteristic temperature of the conduction-band-tail-states (TG) are extracted. Since both values showed only minor changes after BTS, the results imply that observed shift in TFT I DS-V GS curves were primarily due to channel charge injection/trapping rather than defect states creation. We also demonstrated the validity of using stretch-exponential equation to model both positive and negative BTS induced threshold voltage shift (DeltaV th) of the a-IGZO TFTs. Stress voltage and temperature dependence of DeltaV th evolution are described. |
| Sponsorship | IEEE Lasers and Electro-Optics Society Optical Society of America |
| Starting Page | 452 |
| Ending Page | 461 |
| Page Count | 10 |
| File Size | 810596 |
| File Format | |
| ISSN | 1551319X |
| Volume Number | 5 |
| Issue Number | 12 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radio frequency Amorphous materials Thin film transistors Stress Temperature Flat panel displays Active matrix technology Threshold voltage Crystallization Annealing transparent thin-film transistors (TFTs) a-IGZO amorphous semiconductors bias temperature stress (BTS) semiconductor device reliability |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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