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Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Park, Suehye Cho, Edward Namkyu Yun, Ilgu |
| Copyright Year | 2012 |
| Abstract | Amorphous In–Ga–Zn–O thin-film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength-varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative VGS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification. |
| Starting Page | 333 |
| Ending Page | 338 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/jsid.170 |
| Volume Number | 21 |
| Alternate Webpage(s) | http://semicim.yonsei.ac.kr/semicim/Publications/Paper/Int/80.Park.pdf |
| Alternate Webpage(s) | http://web.yonsei.ac.kr/semicim/Publications/Paper/Int/80.Park.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/jsid.170 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
