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Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr,Ti)O3 thin films prepared by pulsed laser deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tang, Xin Tian, Hy Y. Wang, Jiaojiao Wong, Kin-Hung Chan, Helen L. W. |
| Copyright Year | 2006 |
| Abstract | Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)∕Ti∕SiO2∕Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25–35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ∼70% and 37 and 75% and 36, respectively, under an applied field of 400kV∕cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed. |
| Starting Page | 142911 |
| Ending Page | 142911 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2360177 |
| Volume Number | 89 |
| Alternate Webpage(s) | http://ira.lib.polyu.edu.hk/bitstream/10397/431/1/interlayer_06.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2360177 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
