NDLI: Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications

Content Provider	IEEE Xplore Digital Library
Author	Tang, X.G. Chan, L.W.
Copyright Year	2004
Description	Author affiliation: Dept. of App. Phys. & Mater. Res. Center, Hong Kong Polytech. Univ., China (Tang, X.G.; Chan, L.W.)
Abstract	Nano-structured barium zirconate titanate Ba(Ti/sub 1-x/Zr/sub x/)O/sub 3/ (BTZ, x=0.20, 0.25,0.30 and 0.35, abbreviated as BTZ20, BTZ25, BTZ30, and BTZ35, respectively) thin films on Pt/Ti/SiO/sub 2//Si(100) substrates have been prepared by pulse laser deposition (PLD) using a KrF Excimer Laser, lambda Physik Complex (/spl lambda/= 248 nm, 650 mJ, 25 ns). The targets are BTZ20, BTZ25, BTZ30 and BTZ35. The films were deposited at a laser repetition rate of 10 Hz and pulse laser energy of 300 mJ. The deposition rate was 20 nm/min. The oxygen pressure was an important factor and was kept 200 mTorr. Finally, the thin films were crystallized in situ at 650/spl deg/C in 400 mTorr of oxygen for 20 min and cooled down slowly to room temperature. The thin films were characterized using XRD and SEM. Dielectric measurements revealed that the thin films a relaxor behavior and have a diffuse phase transition when the Zr content of x increased from 0.20 to 0.35. The tunability decreased and figure of merit increased when the Zr content of x increased from 0.20 to 0.35, respectively for BTZ the thin films. Both of BTZ thin films with Zr content of 0.30 and 0.35 have low dielectric constant and high figure of merit. Therefore, the BTZ thin film is an attractive candidate for microwave tunable device applications.
Sponsorship	Electrical Eng. and Comput. Sci. Dept. and Microsystems Technol. Lab. at MIT American Vacuum Soc. IEEE Electron Device Soc. Stellar Micro-Devices
Starting Page	158
Ending Page	159
File Size	124531
Page Count	2
File Format	PDF
ISBN	0780383974
DOI	10.1109/IVNC.2004.1354948
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-07-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric thin films Pulsed laser deposition Zirconium Optical pulses Barium Titanium compounds Sputtering Substrates Crystallization Temperature
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Electric and ferroelectric properties of Pb(Zr/sub 0.2/Ti/sub 0.8/)O/sub 3/ thin films deposited by pulsed laser deposition on single crystalline substrates

Dielectric properties of CaCu/sub 3/Ti/sub 4/O/sub 12/ thin films

Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVD

Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Sputtering Deposition of (BaxSr1-x) TiO3 Thin Films for Microwave Waveguide Devices

Dielectric relaxation in pulsed excimer laser ablated amorphous zirconium titanate thin films

Study on compositionally graded epitaxial barium strontium titanate thin films derived from pulsed laser deposition

Low-temperature preparation of ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ thin films by pulsed laser deposition

Large area SrTiO/sub 3/ thin films for active microwave applications grown by pulsed laser deposition

Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications

Similar Documents

Electric and ferroelectric properties of Pb(Zr/sub 0.2/Ti/sub 0.8/)O/sub 3/ thin films deposited by pulsed laser deposition on single crystalline substrates

Dielectric properties of CaCu/sub 3/Ti/sub 4/O/sub 12/ thin films

Compositional control of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films by reactive sputtering and MOCVD

Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Sputtering Deposition of (BaxSr1-x) TiO3 Thin Films for Microwave Waveguide Devices

Dielectric relaxation in pulsed excimer laser ablated amorphous zirconium titanate thin films

Study on compositionally graded epitaxial barium strontium titanate thin films derived from pulsed laser deposition

Low-temperature preparation of ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ thin films by pulsed laser deposition

Large area SrTiO/sub 3/ thin films for active microwave applications grown by pulsed laser deposition

Nonlinear dielectric properties of Ba(Ti,Zr)O/sub 3/ thin films for tunable microwave device applications