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Dielectric properties of (Ba 0.8Sr 0.2)(Zr x Ti 1- x )O 3 thin films grown by pulsed-laser depositio
| Content Provider | Semantic Scholar |
|---|---|
| Author | Cheng, Bo-Lin Wang, Changping Wang, Sheng-Yu Lu, Hongbo B. Zhou, Ying-Lin Chen, Zhenhao Yang, Jerry |
| Copyright Year | 2005 |
| Abstract | Thin films of (Ba0.8Sr0.2)(ZrxTi1−x)O3 (x= 0, 0.08, 0.18, 0.36) were grown on Pt/TiO 2/SiO2/Si substrate at temperature of 550 ◦C by pulsedlaser deposition. XRD patterns show that the thin films are well crystallized into perovskite structure. Electric properties of the thin films, including the dielectric constant, dielectric loss, tunability, polarization loops, and leakage current, were investigated. With an increasing o f Zr content, the tunability of dielectric constant and ferroelectric polarization of the thin films decrease and the ferroelectricity disappears. Significantly, it is found that the dielectric loss and leakage current of thin films are reduced by the substitution of Ti with Zr. Furthermore, t © |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://l03.iphy.ac.cn/l03/papers/lzcao-Dielectric%20properties%20of%20Ba0.8Sr0.2ZrxTi1xO3%20thin%20films%20grown%20by%20pulsedlaser%20deposition.pd.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
