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Ultrahigh capacitive energy storage in highly oriented Ba(ZrxTi1-x)O3 thin films prepared by pulsed laser deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Instan, Alvaro A. Pavunny, Shojan P. Bhattarai, Mohan K. Katiyar, Ram S. |
| Copyright Year | 2017 |
| Abstract | We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZrxTi1−xO3 (x = 0.3, 0.4, and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make them potential lead-free capacitive energy storage materials for scalable electronic devices. A high dielectric constant of ∼1400–3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 ± 1 and 156 ± 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ∼3 MV/cm with an efficiency of 72.8 ± 0.6% in an optimum 30% Zr substituted BaTiO3 composition. |
| Starting Page | 142903 |
| Ending Page | 142903 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4986238 |
| Alternate Webpage(s) | https://arxiv.org/pdf/1708.07976v1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4986238 |
| Volume Number | 111 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
