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Thermal stability of Si/Si1−x−yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liu, Chih-Wen Tseng, Yolanda D. Chern, M. Y. Chang, Chow Ling Sturm, James C. |
| Copyright Year | 1999 |
| Abstract | The thermal stability of Si/Si1−x−yGexCy/Si quantum wells was studied by high resolution x-ray diffraction, Fourier transform infrared spectroscopy, and defect etching. There are different pathways of strain relaxation in this material system, depending on the annealing temperature. The lattice structure of Si1−x−yGexCy was as stable as the Si1−xGex alloys at an annealing temperature of 800 °C for 2 h. At an annealing temperature of 900 °C for 2 h, the structures of both Si1−x−yGexCy and Si1−xGex started to relax. The addition of C enhanced the Ge outdiffusion in Si1−x−yGexCy, compared to that of Si1−xGex. For the annealing temperatures of 950 and 1000 °C for 2 h, the Si1−xGex continued to relax with the decrease of strain in the quantum wells, but the Si1−x−yGexCy relaxed with the increase of the strain due to the formation of SiC precipitates. Misfit dislocation formation was observed in the Si1−x−yGexCy alloys with initial thicknesses below the critical thickness after annealing at 1000 °C for 2 h. Thi... |
| Starting Page | 2124 |
| Ending Page | 2128 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.369513 |
| Volume Number | 85 |
| Alternate Webpage(s) | http://www.princeton.edu/sturm/publications/journal-articles/JP.83.JAP.1999.pdf |
| Alternate Webpage(s) | https://scholar.princeton.edu/sites/default/files/sturm/files/jp.83.jap_.1999.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.369513 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
