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Electroluminescence properties of nanocrystal Si/SiO2 superlattices grown by rapid thermal chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kaang, Lung Hyun Kim, Young Dae Cheong, Hea Jeong Kim, Yong Tae Yi, Jae-Yel Bark, Jun Chung, Tat Hang |
| Copyright Year | 2004 |
| Abstract | The electroluminescence (EL) properties of metal-oxide-semiconductor (MOS) devices employing nanocrystal Si/SiO2 superlattices are investigated. The amorphous silicon-rich oxide/SiO2 superlattices are grown by using rapid thermal chemical vapor deposition. During high-temperature annealing at 1100 ◦C, Si nanocrystals are precipitated. Despite the simple MOS structure, the device shows conventional diode behavior in the current-voltage characteristics. We observe EL only under the forward bias condition, and the turn-on voltage is as low as 8 V. The EL intensity increases with increasing bias and is saturated over 11 V. We observe a systematic blueshift of the EL with increasing applied bias. Therefore, the observed EL is attributed to radiative recombination of carriers confined in the Si nanocrystals. |
| Starting Page | 1065 |
| Ending Page | 1068 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Volume Number | 45 |
| Alternate Webpage(s) | http://plasmalab.donga.ac.kr/bk/jhk2004.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
