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Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1−x−yGexCy films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Choi, Wee Kiong Feng, Wei Bera, Lakshmi Kanta Yang, Cary Y. |
| Copyright Year | 2001 |
| Abstract | Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C. |
| Starting Page | 5819 |
| Ending Page | 5824 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1413715 |
| Volume Number | 90 |
| Alternate Webpage(s) | https://cms.scu.edu/engineering/centers/tent/upload/publication5.pdf |
| Alternate Webpage(s) | https://scholarcommons.scu.edu/cgi/viewcontent.cgi?article=1056&context=elec |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1413715 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
