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SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gruetzmacher, Detlev A. Sedgwick, Thomas O. Scandella, Loris Dr. Zaslavsky, Alexander I. Powell, Adrian R. Lyer, S. |
| Copyright Year | 1995 |
| Abstract | Abstract Atmospheric pressure chemical vapor deposition has been used to grow SiGe/Si quantum well structures on (001) oriented Si substrates. SiCl 2 H 2 and GeH 4 were used as reactive gases in a H 2 atmosphere. The hydrogen ambient is shown to greatly facilitate the deposition of quantum wells with abrupt interfaces in the temperature range of 550–750 °C. The interface roughness is determined to be less than two monolayers, as shown by X-ray reflectivity, X-ray diffractometry data and the characteristics of resonant tunnel diodes showing a peak to valley ratio of 4.2. Photoluminescence spectra with resolved lines of no-phonon and phonon assisted recombination processes are observed. |
| Starting Page | 947 |
| Ending Page | 950 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/0042-207X(95)00079-8 |
| Volume Number | 46 |
| Alternate Webpage(s) | https://www.brown.edu/research/labs/zaslavsky/sites/zaslavsky/files/1995Vacuumv46p947.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/0042-207X%2895%2900079-8 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |