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Room Temperature Electroluminescence from InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by Metal Organic Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mohan, Rajneesh Tanabe, Katsuaki Kako, Satoshi Kawaguchi, Kenichi Nishioka, Masateru Arakawa, Y. |
| Copyright Year | 2013 |
| Abstract | The first room temperature (RT) observation of electroluminescence (EL) from InAs/GaAs quantum dots (QDs) grown directly on Ge/Si substrate by metal organic chemical vapor deposition is reported. RT EL at 1.24 μm was observed from the double hetero structure, containing high density 8-layer stacked InAs/Sb:GaAs QD active region. These results are promising for the realization of monolithically integrated QD laser for silicon photonics application. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2013.P-5-3 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2013/P-5-3/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2013.P-5-3 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |