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Electroluminescence of Ge Õ Si self-assembled quantum dots grown by chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Brunhes, Thomas Boucaud, Philippe Sauvage, S'ebastien Aniel, Frédéric Lourtioz, J.-M. Hernandez, C. C. Campidelli, Yves Kermarrec, O. Bensahel, Daniel Faini, Giancarlo |
| Copyright Year | 2000 |
| Abstract | We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of thep– i –n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4–1.5 mm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics. @S0003-6951 ~00!00437-X# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.qdgroup.u-psud.fr/publications/EL%20QD%20APL1822%20-2000.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |