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Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain
Content Provider | Semantic Scholar |
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Author | Zhang, Y. B. Sun, Liwei Xu, Hailin Han, Jae Woong |
Copyright Year | 2015 |
Abstract | Dopant-segregated Schottky source/drain (S/D) tunnel field effect transistors (STFET) are investigated. The working mechanisms of STFET and the influence of device parameters are studied with Synopsys Sentaurus. STFET has similar performance as TFET in spite of the existence of Schottky contact. High segregation doping for STFET is required to increase tunneling probability and suppress bipolar behaviors. Increasing eSBH at source side helps to reduce hole barrier and improve drive current. Furthermore, STFET is also insensitive to segregation length and the barrier at drain side, which would relax the requirement for S/D fabrication. |
File Format | PDF HTM / HTML |
DOI | 10.7567/ssdm.2015.ps-3-17 |
Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2015/PS-3-17/public/pdf_archive?type=in |
Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2015.ps-3-17 |
Language | English |
Access Restriction | Open |
Content Type | Text |
Resource Type | Article |