NDLI: High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Content Provider	IEEE Xplore Digital Library
Author	Sung-Jin Choi Jin-Woo Han Sungho Kim Dong-Il Moon Moongyu Jang Yang-Kyu Choi
Copyright Year	1980
Abstract	A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.
Sponsorship	IEEE Electron Devices Society
Starting Page	228
Ending Page	230
Page Count	3
File Size	420348
File Format	PDF
ISSN	07413106
Volume Number	31
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Thin film transistors Nickel Silicides Immune system P-n junctions Decision support systems Moon Schottky barriers Circuits thin-film transistors (TFTs) Dopant-segregated Schottky barrier (DSSB) dopant segregation (DS) high performance MOSFET Ni silicide Schottky barrier (SB) thin body
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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