Loading...
Please wait, while we are loading the content...
Similar Documents
Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors
| Content Provider | Scilit |
|---|---|
| Author | Ishikawa, Takayuki Saitoh, Masumi Ota, Kensuke Tanaka, Chika Numata, Toshinori |
| Copyright Year | 2012 |
| Description | Journal: Japanese Journal of Applied Physics Schottky barrier (SB) source/drain (S/D) nanowire field-effect transistors (FETs) were fabricated with lateral silicidation process, and their nanowire-width and dopant-species dependences were investigated systematically by means of electrical characterization and physical analyses. Carrier transport characteristics of these nanowire FETs showed a nanowire-width dependence and its dependence varied among dopant species. The degree of the lateral silicidation process also showed nanowire-width and dopant-species dependences. We found that the carrier transport mechanisms depending on S/D dopant species and nanowire width can be attributed to the difference of the lateral silicidation progress. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.51.04DC05/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.51.04dc05 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4S |
| Volume Number | 51 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2012-04-20 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Carrier Transport Dopant Species Dependences |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
