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Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme
| Content Provider | Semantic Scholar |
|---|---|
| Author | Reddy, Varra Rajagopal Ramesh, Chand |
| Copyright Year | 2004 |
| Abstract | A Ti/Al/Re/Au multilayer scheme has been developed for obtaining very low ohmic contact to moderately doped n-type GaN (4.07 x 10(18) cm(-3)). It is shown that the I-V characteristics of the as-deposited contacts improved upon annealing temperatures in the range of 550-750degreesC. Specific contact resistance as low as 1.3 x 10(-6) Omegacm(2) is obtained from the Ti (150Angstrom)/Al (600Angstrom)/Re (200Angstrom)/Au (500Angstrom) contact annealed at 750degreesC for 1 min in a N-2 ambient. It is also shown that annealing results in a large reduction (by similar to150 meV) in the Schottky barrier heights of contact, compared to the as-deposited one. Based on the XPS and AES results, possible explanations for the annealing temperature dependence of the specific contact resistance of the Ti/Al/Re/Au contacts are described and discussed. |
| Starting Page | 177 |
| Ending Page | 182 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 6 |
| Alternate Webpage(s) | https://joam.inoe.ro/arhiva/pdf6_1/Reddy.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
