NDLI: Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

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Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

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Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

Content Provider	Springer Nature Link
Author	Qin, Z.X. Chen, Z.Z. Tong, Y.Z. Ding, X.M. Hu, X.D. Yu, T.J. Zhang, G.Y.
Copyright Year	2003
Abstract	The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific contact resistivity has been investigated by changing the annealing temperature from 400 to 900 °C. Ti/Al/Au and Ti/Al/Ni/Au films were superior to the bilayer (Ti/Au) in ohmic contact characteristics and thermal stability. The Ti/Al/Ni/Au composite showed the best thermal stability due to the fact that Ni plays a more important role than the alloy of Ti/Al in preventing the interdiffusion of Ti, Al, and Au. The lowest contact resistivity (∼10-7Ω cm2) to n-GaN was obtained for the Ti/Al/Ni/Au sample by short-time/high-temperature annealing. The formation mechanism of ohmic contacts to n-GaN is also discussed.
Starting Page	729
Ending Page	731
Page Count	3
File Format	PDF
ISSN	09478396
Journal	Applied Physics A
Volume Number	78
Issue Number	5
e-ISSN	14320630
Language	English
Publisher	Springer-Verlag
Publisher Date	2003-01-08
Publisher Place	Berlin, Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Science

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