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Low resistance bilayer Nd/Al ohmic contacts on n-type GaN
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Cedric K. M. Yeh, Ming-Yuan Tsai, Chang-Da Lyu, Yen-Tang |
| Copyright Year | 1997 |
| Abstract | A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN ( 1 × 1018 cm−3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10−6 Ω−cm2 and 8 × 10−6 Ω−cm2 were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation. |
| Starting Page | 262 |
| Ending Page | 265 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s11664-997-0161-1 |
| Volume Number | 26 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/s11664-997-0161-1 |
| Alternate Webpage(s) | https://doi.org/10.1007/s11664-997-0161-1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
