Loading...
Please wait, while we are loading the content...
Similar Documents
Novel Epitaxial Growth Technology of Si1-xGex Films by in situ Rapid Thermal Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ashikaga, Kinya Fukuda, Hisashi Ohno, Seigo |
| Copyright Year | 1991 |
| Abstract | In the future generation of Si-based heterostructural devices such as heterobipolar transistor (HBT), epitaxial Si 1-;Ge; film becomes of great importancel)2). The electrical characteristics and reliability of the devices will critically depend on the perfection of the epitaxial layer. Thus, the goal of the epitaxial growth of Sil-xGex is to obtain the film with controlled Ge concentration and abrupt dopant profiles, and free from dislocation. Considering commensuration with manufacture and advantage of forming abrupt profiles of dopant and Ge content, we have studied the epitaxial growth of Si1-1Ge; using RTCVD. It is, in general, recognized that surface cleaning or etching has great influence on epitaxy. For instance, high temperature baking in H2 or HCI etching is often used. However, by these methods, the surface may become rough. Thus, in this paper, we will propose a novel epitaxial technology which is effective for decreasing dislocation and smoothing Si1-;Ge; film surface. We will also demonstrate some results of in situ boron doping using BZH6 gas by RTCVD. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.1991.PB4-4 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm1991/PB4-4/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.1991.PB4-4 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
