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Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
| Content Provider | Semantic Scholar |
|---|---|
| Author | Pey, Kin Leong Chi, Dongzhi Lee, Pooi See Setiawan, Yudha Hoe, Keat Mun |
| Copyright Year | 2008 |
| Abstract | We studied erbium germanosilicide films formed on relaxed p-type Si 1-x Ge x (100) (x = 0-0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500-700°C. Two dimensional X-ray diffraction and pole figure measurements revealed that the silicide films formed were epitaxial Er(Si 1-x Ge x ) 2-y with orientation relationship Er(Si 1-x Ge x ) 2-y (1100)-[0001] II Si 1-x Ge x (001)[110] or Er(Si 1-x Ge x ) 2-y (1100)[0001] II Si 1-x Ge x (001)[110]. Schottky barrier height, Φ Bp , of the Er(Si 1-x Ge x ) 2-y /p - Si 1-x Ge x (100) contact was found to decrease from 0.79 to 0.62 eV with increasing Ge (from 0 to 30%), implying a slight increase in its barrier height for electrons, Φ Bneff , from 0.33 to 0.37 eV. |
| File Format | PDF HTM / HTML |
| DOI | 10.1149/1.2800761 |
| Volume Number | 155 |
| Alternate Webpage(s) | https://dr.ntu.edu.sg/bitstream/handle/10220/8006/52.%20Materials%20and%20electrical%20characterization%20of%20Er(Si1-xGex)(2-y)%20films.pdf?isAllowed=y&sequence=1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
