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Growth and band gap of strained 〈110〉 Si1−xGex layers on silicon substrates by chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sturm, James C. Lacroix, Y. Thewalt, Mike L. W. Perovic, Douglas D. |
| Copyright Year | 1994 |
| Abstract | We report chemical vapor deposition growth of strained Si1−xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large ‘‘no‐phonon’’ replica line strength ratio was observed as compared with that observed in 〈100〉 layers. |
| Starting Page | 76 |
| Ending Page | 78 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.113079 |
| Volume Number | 65 |
| Alternate Webpage(s) | http://nanosioe.ee.ntu.edu.tw/Download/Paper/PhD/APL1994001.pdf |
| Alternate Webpage(s) | http://www.princeton.edu/sturm/publications/journal-articles/JP.48.APL.1994.pdf |
| Alternate Webpage(s) | https://scholar.princeton.edu/sites/default/files/sturm/files/jp.48.apl_.1994.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.113079 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
