Loading...
Please wait, while we are loading the content...
Similar Documents
Influence of electronic correlations on the frequency-dependent hopping transport in Si : P
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ritz, Elvira Dressel, M. |
| Copyright Year | 2008 |
| Abstract | At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate to interpret the electric conductivit y spectra. With a newly developed technique we have measured the complex broadband microwave conductivity of Si:P from 100 MHz to 5 GHz in a broad range of phosphorus concentration/nc from 0.56 to 0.95 relative to the critical valuenc = 3.5 × 10 cm corresponding to the metal-insulator transition driven by doping. At our base temperature of T = 1.1 K the samples are in the zero-phonon regime where they show a super-linear frequency dependence of the conductivity indicating the influence of the Coulomb gap in the density of the impurity states. At higher dopingn → nc, an abrupt drop in the conductivity power lawσ1(ω) ∼ ω is observed. The dielectric functionε1 increases upon doping following a power law in ( 1 − n/nc). Dynamic response at elevated temperatures has also been investigated. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://arxiv.org/pdf/0711.1256v1.pdf |
| Alternate Webpage(s) | http://arxiv.org/pdf/0711.1256v2.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Arabic numeral 0 Doping (semiconductor) Doping in Sports Electron Frequency-hopping spread spectrum International System of Units Megahertz Metal (API) Microwave Phonon Phosphorus Topological insulator |
| Content Type | Text |
| Resource Type | Article |
