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Variable-range hopping conduction in doped germanium at very low temperatures and high magnetic fields
| Content Provider | Semantic Scholar |
|---|---|
| Author | Schoepe, Wilfried |
| Copyright Year | 2005 |
| Abstract | The conductivity of doped Ge below the metalqnsulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges as T 1/2. In weak fields the magnetoresistance increases as B 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of variable-range hopping between localized states having a Coulomb gap in the density of states at the Fermi level. The magnetoresistance is calculated for arbitrary fields by means of a quasi-classical method. A fit to the data gives the radius of the localized states and the density of states. The sample is found to be very close to the metal-insulator transition. A small increase of the binding energy is observed in strong fields. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://epub.uni-regensburg.de/18846/1/shoepe17.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Arabic numeral 0 Cold Temperature Doping (semiconductor) Femtometer Frequency-hopping spread spectrum Germanium Greater Than or Equal To Hurst exponent Magnetic Resonance Imaging Metal (API) Tesla (microarchitecture) Tesla - unit Topological insulator |
| Content Type | Text |
| Resource Type | Article |
