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Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hung, Ting-Hsiang Esposto, Michele Rajan, Siddharth |
| Copyright Year | 2011 |
| Abstract | We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/ GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5 10 cm 2 and dielectric/AlGaN interface charge density is above 5 10 cm . The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5 nm. VC 2011 American Institute of Physics. [doi:10.1063/1.3653805] |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://chppe.osu.edu/sites/chppe.osu.edu/files/uploads/Publications3/Interfacial%20charge%20effects%20on%20electron%20transport%20in%20III-Nitride%20metal%20insulator%20semiconductor%20transistors.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Electron Transport Interface Device Component Metal (API) Phonon Semiconductor Thickness (graph theory) Topological insulator Transistor gallium nitrate |
| Content Type | Text |
| Resource Type | Article |
