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Effect of post-deposition annealing on the structural and electrical properties of RF sputtered hafnium oxide thin films
| Content Provider | Scilit |
|---|---|
| Author | Das, K. C. Ghosh, S. P. Tripathy, Nilakantha Bose, G. Kar, J. P. |
| Copyright Year | 2016 |
| Description | Journal: Iop Conference Series: Materials Science and Engineering Hafnium oxide films were deposited on silicon substrates by RF sputtering at room temperature. Post-deposition rapid thermal annealing of the sputtered $HfO_{2}$ films was carried out in the temperature range of 400°C to 800°C in oxygen ambient. The structural properties ware studied by X-ray diffraction (XRD), where the enhancement in the crystallinity of $HfO_{2}$ (1¯11) orientation was observed. The Capacitance —Voltage (C-V) and Current density —Voltage (J-V) characteristics of the annealed dielectric film were investigated employing $Al/HfO_{2}$/Si Metal Oxide Semiconductor (MOS) capacitor structure. The flatband voltage (V$ _{fb}$ ) and oxide charge density (Q$ _{ox}$ ) were extracted from the high frequency (1 MHz) C-V curve. Leakage current was found to be minimum for the annealing temperature of 600°C. |
| Related Links | http://iopscience.iop.org/article/10.1088/1757-899X/115/1/012015/pdf |
| ISSN | 17578981 |
| e-ISSN | 1757899X |
| DOI | 10.1088/1757-899x/115/1/012015 |
| Journal | Iop Conference Series: Materials Science and Engineering |
| Volume Number | 115 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-02-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Iop Conference Series: Materials Science and Engineering Condensed Matter Physics Hafnium Oxide Leakage Current Post Deposition Rf Sputtering Thin Films Charge Density Oxide Semiconductor |
| Content Type | Text |
| Resource Type | Article |
