NDLI: Influence of oxygen flow rate on structural, optical and electrical properties of copper oxide thin films prepared by reactive magnetron sputtering

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Influence of oxygen flow rate on structural, optical and electrical properties of copper oxide thin films prepared by reactive magnetron sputtering

Content Provider	Scilit
Author	Gaewdang, Thitinai Wongcharoen, Ngamnit
Copyright Year	2017
Description	Journal: Iop Conference Series: Materials Science and Engineering In this research, copper oxide thin films were prepared by reactive dc magnetron sputtering method on glass substrates with oxygen flow rate in the range of 1-10 sccm. From XRD patterns, formation of $Cu_{2}$O cubic structure or CuO monoclinic structure was controlled by adjusting oxygen flow rate. Nanocrystallite size of the as-grown films was observed by AFM. From transmittance spectra, direct energy gap varied between 1.97 and 2.55 eV. Electrical conductivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. Important electrical parameters of films as a function of oxygen flow rate were observed. With low resistivity and high mobility values, the films prepared at oxygen flow rate of 8 sccm are identified as suitable candidates for fabrication as absorber layer in solar cell devices.
Related Links	http://iopscience.iop.org/article/10.1088/1757-899X/211/1/012025/pdf
ISSN	17578981
e-ISSN	1757899X
DOI	10.1088/1757-899x/211/1/012025
Journal	Iop Conference Series: Materials Science and Engineering
Volume Number	211
Language	English
Publisher	IOP Publishing
Publisher Date	2017-06-27
Access Restriction	Open
Subject Keyword	Journal: Iop Conference Series: Materials Science and Engineering Condensed Matter Physics Solar Cell Thin Films Oxygen Flow Rate Magnetron Sputtering Oxide Thin
Content Type	Text
Resource Type	Article

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