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Investigation of structural and electrical properties on substrate material for high frequency metal–oxide–semiconductor (MOS) devices
| Content Provider | Scilit |
|---|---|
| Author | Kumar, M. Yang, Sung-Hyun Reddy, K. Janardhan Chandra, S. V. Jagadeesh |
| Copyright Year | 2017 |
| Description | Journal: Materials Research Express Hafnium oxide $(HfO_{2}$) thin films were grown on cleaned P-type 〈1 0 0〉 Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed $HfO_{2}$ films was characterized by XPS, further electrical measurements; we fabricated the metal–oxide–semiconductor (MOS) devices with Pt electrode. Post deposition annealing in $O_{2}$ ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance–voltage (C–V) and conductance–voltage (G–V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D$ _{it}$ value as Si MOS devices. The C–V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at $HfO_{2}$/Ge stacks than $HfO_{2}$/Si stacks conformed by the HRTEM images. Besides, from current–voltage (I–V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications. |
| Related Links | http://iopscience.iop.org/article/10.1088/2053-1591/aa6a37/pdf |
| ISSN | 20531591 |
| e-ISSN | 20531591 |
| DOI | 10.1088/2053-1591/aa6a37 |
| Journal | Materials Research Express |
| Issue Number | 4 |
| Volume Number | 4 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Materials Research Express Applied Physics Condensed Matter Physics Leakage Current Electrical Properties Si Substrates Thin Films Atomic Layer Deposition Hafnium Oxide |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Metals and Alloys Biomaterials Electronic, Optical and Magnetic Materials Polymers and Plastics |
