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Improved Semipolar (112̄2) GaN Quality Grown on m -Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN$ _{ x }$ Interlayer
| Content Provider | Scilit |
|---|---|
| Author | Xu, Sheng-Rui Zhao, Ying Jiang, Teng Zhang, Jin-Cheng Li, Pei-Xian Hao, Yue |
| Copyright Year | 2016 |
| Description | Journal: Chinese Physics Letters The effect of a self-organized $SiN_{x}$ interlayer on the defect density of (112) semipolar GaN grown on m-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffraction. The $SiN_{x}$ interlayer reduces the c-type dislocation density from 2.5 × $10^{10}$ $cm^{−2}$ to 5 × $10^{8}$ $cm^{−2}$. The $SiN_{x}$ interlayer produces regions that are free from basal plane stacking faults (BSFs) and dislocations. The overall BSF density is reduced from 2.1 × $10^{5}$ $cm^{−1}$ to 1.3 × $10^{4}$ $cm^{−1}$. The large dislocations and BSF reduction in semipolar (112) GaN with the $SiN_{x}$ interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the $SiN_{x}$ interlayer, and the second mechanism is associated with the unique structure character of (112) semipolar GaN. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/33/6/068102/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/33/6/068102 |
| Journal | Chinese Physics Letters |
| Issue Number | 6 |
| Volume Number | 33 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Gan Quality Grown |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
