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ECR Plasma Etching with Heavy Halogen Ions
| Content Provider | Scilit |
|---|---|
| Author | Fujiwara, Nobuo Sawai, Hisaharu Yoneda, Masahiro Nishioka, Kyusaku Abe, Haruhiko |
| Copyright Year | 1990 |
| Description | Journal: Japanese Journal of Applied Physics It is shown that the ECR plasma, which contains heavy halogen ions and other light ions, is effective as a dry etching technique for fabrication of VLSI devices. The ion temperature, which is one of the most important parameters for etching fine features, is greatly reduced by using a $Cl_{2}$/He mixture gas and by controlling the pressure. By this method, strong anisotropic etching of poly-Si is realized with high selectivity to $SiO_{2}$. Hydrogen halide gases are suitable gases for the ECR plasma etching process, because they produce heavy halogen ions and protons. In particular, using HBr or HI gas produces a strong anisotropic feature with no micro-loading effects. The ion temperature of $Br^{+}$ ions and $I^{+}$ ions is 1.0∼1.1 eV, which is about half that of $Cl^{+}$ ions. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.29.2223/pdf |
| Ending Page | 2228 |
| Page Count | 6 |
| Starting Page | 2223 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.29.2223 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 10R |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1990-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Plasma Etching Magnetic Field Electron Cyclotron Resonance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
