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$SiO_{2}$ Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using $CF_{4}$ and $NF_{3}$ Gases
| Content Provider | Scilit |
|---|---|
| Author | Fujiwara, Nobuo Miyatake, Hiroshi Yoneda, Masahiro Nakamoto, Kazuo Nakamoto Kazuo Abe, Haruhiko Abe Haruhiko |
| Copyright Year | 1992 |
| Description | Journal: Japanese Journal of Applied Physics We report on the basic investigations of $SiO_{2}$ etching characteristics in low ion energy regions using electron cyclotron resonance (ECR) plasma. The $SiO_{2}$ etch rate is enhanced by higher microwave power and higher pressure, but it is not dependent solely on the ion current density. In the case of $NF_{3}$ plasma, the ion sheath potential depends only on pressure, and the ion current density shows a strong dependence on the distance between the ECR region and the wafer. The yield of $SiO_{2}$ etched with $NF_{3}$ plasma increases as the distance increases. The etching yield of $SiO_{2}$ strongly depends on the ion energy and the flux ratio of neutrals to ions. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.31.1987/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.31.1987 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 6S |
| Volume Number | 31 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Langmuir Probe Plasma Etching Microwave Plasma Electron Cyclotron Resonance Current Density |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
