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Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
| Content Provider | Scilit |
|---|---|
| Author | Saito, Kunio Jin, Yoshito Ono, Toshiro Shimada, Masaru |
| Copyright Year | 2004 |
| Description | Journal: Japanese Journal of Applied Physics Oxidation using electron cyclotron resonance (ECR) plasma stream provides a large silicon dioxide growth rate at the initial growth stage (>6 nm/min), a very small activation energy of 0.02 eV for oxidation, and a high-quality interface with interface trap density of $3×10^{10}$ $cm^{-2}·eV^{-1}$. The plasma stream was extracted by a divergent magnetic field from the ECR region and irradiated on a single-crystalline silicon substrate with ion energies of 10–30 eV. The high-quality interface was obtained by oxidation without substrate heating and only postoxidation annealing at 400°C in hydrogen ambient. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.43.L765/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.43.l765 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 6B |
| Volume Number | 43 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2004-05-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Magnetic Field Electron Cyclotron Resonance Activation Energy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
