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Ultrashallow Junction Formation Using Low-Temperature Selective $Si_{1-x}Ge_{x}$ Chemical Vapor Deposition
| Content Provider | Scilit |
|---|---|
| Author | Honma, Fumitaka Murota, Junichi Goto, Kinya Maeda, Takahiro Sawada, Yasuji Sawada Yasuji |
| Copyright Year | 1994 |
| Description | Journal: Japanese Journal of Applied Physics In situ B doping and selective epitaxy on Si at 550° C in $Si_{1- x }Ge_{ x }$ chemical vapor deposition (CVD) have been investigated for forming high-performance ultrashallow junctions. It was found that the incorporation rate of B increased proportionally with increasing $B_{2}H_{6}$ partial pressure, and was higher for the film with a higher Ge fraction x. Using $Si_{3}N_{4}$, thermal $SiO_{2}$, phosphosilicate glass (PSG) and borophosphosilicate glass (BPSG) as mask film materials, about 40-nm-, 100-nm-, 150-nm- and 150-nm-thick B-doped $Si_{0.5}Ge_{0.5}$ films, respectively, were grown selectively on Si(100). Using this low-temperature selective $Si_{1- x }Ge_{ x }$ CVD, a high-performance self-aligned ultrashallow junction formation has been achieved with a very low reverse current density, in the range of $10^{-10}$ $A/cm^{2}$, without heat treatment. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.33.2300/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.33.2300 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4S |
| Volume Number | 33 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1994-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Junction Formation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
