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Epitaxial Growth of $Si_{1-y}C_{y}$ Film by Low Temperature Chemical Vapor Deposition
| Content Provider | Scilit |
|---|---|
| Author | Yagi, Syuhei Yagi Syuhei Abe, Katsuya Abe Katsuya Yamada, Akira Yamada Akira Konagai, Makoto Konagai Makoto |
| Copyright Year | 2000 |
| Description | Journal: Japanese Journal of Applied Physics Epitaxial $Si_{1-y }C_{y}$ films were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200°C using $SiH_{4}$, $H_{2}$ and $C_{2}H_{2}$. The vibration mode at 607 $cm^{-1}$, which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700°C. The C composition was controlled by varying the $C_{2}H_{2}/SiH_{4}$ ratio. The maximum substitutional C compositions of 2.3 at% and 2.7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.39.L1078/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.39.l1078 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 11A |
| Volume Number | 39 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2000-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Growth of Si Epitaxial Growth Epitaxial Si Deposition Epitaxial Low Temperature Chemical |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
