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Photochemical Vapor Deposition of $Si/Si_{1-x}Ge_{x}$ Strained Layer Superlattices at 250°C
| Content Provider | Scilit |
|---|---|
| Author | Yamada, Akira Jia, Ying Konagai, Makoto Takahashi, Kiyoshi |
| Copyright Year | 1988 |
| Description | Journal: Japanese Journal of Applied Physics $Si/Si_{1-x }Ge_{ x }$ strained layer superlattices have been successfully grown by mercury-sensitized photochemical vapor deposition at a very low temperature of 250°C. Lattice strain and lattice dynamics of the superlattices were examined by Raman scattering and X-ray diffraction measurements and it was found that the in-plane lattice constant of the superlattices was commensurate with the lattice constant of a silicon substrate. Direct observation of superlattice structures was carried out by transmission electron microscopy measurement. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.27.L2174/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.27.l2174 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 11A |
| Volume Number | 27 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1988-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Deposition of Si/si Photochemical Vapor Strained Layer Layer Superlattices |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
