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Low-Frequency Noise in $Si_{1-x}Ge_{x}$ p-Channel Metal Oxide Semiconductor Field-Effect Transistors
| Content Provider | Scilit |
|---|---|
| Author | Tsuchiya, Toshiaki Matsuura, Takashi Murota, Junichi |
| Copyright Year | 2001 |
| Description | Journal: Japanese Journal of Applied Physics Low-frequency noise (LFN) in $Si_{1-x }Ge_{ x }$ p-channel Metal Oxide Semiconductor Field-Effect Transistors (pMOSFETs) with a relatively wide range of Ge fraction x=0.2, 0.5, 0.7, and $Si_{1-x }Ge_{ x }$ thickness d$ _{SiGe}$ of 2–14 nm are investigated. Although LFN of $Si_{1-x }Ge_{ x }$ pMOSFETs seems to be complicated functions of d$ _{SiGe}$ and Ge fraction, it is shown that LFN in $Si_{1-x }Ge_{ x }$ pMOSFETs can be lower than that in conventional Si pMOSFETs. Moreover, in order to evaluate the trap density at the $Si_{1-x }Ge_{ x }$/Si heterostructure interface, the noise power at bias conditions showing the maximum transconductance g$ _{mMAX}$ is examined. At the bias conditions, drain current is confirmed to flow mainly in the buried $Si_{1-x }Ge_{ x }$ channel, but not in the surface Si channel. Surface generation current is also examined to evaluate the trap density at the interface between the gate oxide and the Si capping layer. The dependence of the noise power on d$ _{SiGe}$ and Ge fraction corresponds well to that of g$ _{mMAX}$, but not to that of the surface generation current. It is concluded that the noise characteristics at the g$ _{mMAX}$ bias conditions reflect the trap density at the $Si_{1-x }Ge_{ x }$/Si heterostructure interface, and correspond well to g$ _{mMAX}$ behavior. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.40.5290/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.40.5290 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 9R |
| Volume Number | 40 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2001-09-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Low Frequency Noise |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
