Loading...
Please wait, while we are loading the content...
Similar Documents
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Nishiguchi, Kenya Kaneki, Syota Ozaki, Shiro Hashizume, Tamotsu |
| Copyright Year | 2017 |
| Abstract | To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D–V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance–voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures. |
| Starting Page | 101001 |
| Ending Page | 101001 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/JJAP.56.101001 |
| Volume Number | 56 |
| Alternate Webpage(s) | https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/67316/1/Jpn.J.Appl.Phys.56.101001.pdf |
| Alternate Webpage(s) | http://iopscience.iop.org/article/10.7567/JJAP.56.101001/pdf |
| Alternate Webpage(s) | https://doi.org/10.7567/JJAP.56.101001 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
