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Electro-deposited gallium arsenide film: II. Electrochemical and photoelectrochemical solar cell studies
| Content Provider | Scilit |
|---|---|
| Author | Chandra, Suresh Khare, N. |
| Copyright Year | 1987 |
| Description | Journal: Semiconductor Science and Technology For pt.I see ibid., vol.2, p.214 (1987). A semiconductor/electrolyte junction has been prepared by dipping an electro-deposited GaAs film into a S^{2-}/S_{2}$^{2-}$ electrolyte. The J-V characteristics of the interface in the dark and under illumination show that the charge transfer at the interface occurs via a valence band involving surface states and deep traps. The values of $V_{fb}$, $N_{D}$, $E_{c}$, $E_{v}$, W, etc, have been evaluated using Mott-Schottky plots. PESC using the electro-deposited films have been fabricated and studied. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/2/4/004/pdf |
| Ending Page | 225 |
| Page Count | 6 |
| Starting Page | 220 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/2/4/004 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 4 |
| Volume Number | 2 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1987-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Electro Deposited |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
