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Influence of doping density and deposition technology on ohmic contacts to n-type gallium arsenide
| Content Provider | Scilit |
|---|---|
| Author | Mak, L. K. Rogers, C. M. Northrop, D. C. |
| Copyright Year | 1991 |
| Description | Journal: Semiconductor Science and Technology A systematic series of measurements of specific contact resistance has been made for heat treated gold-germanium contacts to epitaxial n-type gallium arsenide. An inverse relationship is found between the specific contact resistance and the donor concentration of the original gallium arsenide for donor concentrations up to $4*10^{17}$ $cm^{-3}$. Above this concentration the specific contact resistance becomes independent of doping. This result, together with measurements of the temperature dependence of specific contact resistance, confirms the 'two-barrier' models of the specific contact resistance, and specifically excludes the spreading resistance model. Further experiments show that the numerical values of specific contact resistance depend on whether the gold-germanium layer is deposited by sputtering or by thermal evaporation. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/6/4/007/pdf |
| Ending Page | 272 |
| Page Count | 5 |
| Starting Page | 268 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/6/4/007 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 4 |
| Volume Number | 6 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1991-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Metallurgy and Metallurgical Engineering Condensed Matter Physics Contact Resistance Ohmic Contact Gallium Arsenide |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
