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X-ray topography of gallium arsenide used for MESFET fabrication
| Content Provider | Scilit |
|---|---|
| Author | Clackson, S. G. Moore, M. Kitching, S. A. |
| Copyright Year | 1992 |
| Description | Journal: Semiconductor Science and Technology X-ray topographs have been taken of gallium arsenide used for MESFET fabrication. A (100) wafer with MESFET arrays fabricated on to it contained dislocation lineage features, one of which was studied in detail. It was found to cause a drop of approximately 40 mV in the pinch-off voltage of the transistors it touched. The feature appeared to have an associated displacement vector of (211)-type, and to be accompanied by a lattice tilt in the wafer of nearly 30 seconds of arc. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/7/1/003/pdf |
| Ending Page | 20 |
| Page Count | 9 |
| Starting Page | 12 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/7/1/003 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 1 |
| Volume Number | 7 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Characterization and Testing of Materials Arsenide Used Gallium Arsenide |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
